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| S T S 2620 S amHop Microelectronics C orp. F eb,25 2005 V er1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 20V P R ODUC T S UMMAR Y (P -C hannel) V DS S -20V ID 2.5A R DS (ON) ( m W ) Max ID -2A R DS (ON) ( m W ) Max 80 @ V G S = 4.5V 110 @ V G S = 2.5V D1 130 @ V G S = -4.5V 190 @ V G S = -2.5V D2 TS OP 6 Top View G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 N-ch G2 S2 P -ch ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ Tc=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 20 10 2.5 8 1.25 1.0 -55 to 150 -20 10 -2 -7 -1.25 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 125 C /W 1 S T S 2620 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 10V, VDS = 0V VDS = VGS, ID = 250uA VGS = 4.5V, ID =2.5A VGS = 2.5V, ID= 2A VDS = 5V, VGS = 4.5V VDS = 5V, ID =2.5A Min Typ C Max Unit 20 1 100 0.5 0.8 65 90 6 7 223 68 53 1.5 80 110 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =10V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGS = 4.5V, R GE N = 6 ohm 10.5 9.8 15.2 11.8 3.9 ns ns ns ns nC nC nC VDS =10V, ID = 2.5A, VGS =4.5V 1.3 0.8 2 S T S 2620 P-Channel ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -16V, VGS = 0V VGS = 10V, VDS = 0V VDS = VGS, ID =-250uA VGS = -4.5V, ID = -2.0A VGS = -2.5V, ID = -1.0A VDS = -5V, VGS = -4.5V VDS = -5V, ID = -2.0A Min Typ C Max Unit -20 1 100 -0.5 -0.8 -1.5 115 175 -5 6 293 65 50 130 190 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS = -20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -10V, ID = -1A, VGS = -4.5V, R GE N = 6 ohm 12.6 13.7 81.5 42.1 3.4 ns ns ns ns nC nC nC VDS = -10V, ID = -2A, VGS = -4.5V 0.8 1 2 S T S 2620 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.25A VGS = 0V, Is =-1.25A N-Ch P-Ch Min Typ Max Unit 0.84 -0.85 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b 5 V Notes a.Surface Mounted on FR4 Board, tO10sec. b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 V G S =10V 16 V G S =4V 15 25 C 12 -55 C V G S =4.5V ID, Drain C urrent(A) ID, Drain C urrent (A) V G S =3V 12 T j=125 C 9 6 8 V G S =2V 4 0 3 0 0.0 0 0.5 1 1.5 2 2.5 3 0.6 1.2 1.8 2.4 3.0 3.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 500 400 300 200 100 C rs s 0 0 5 10 15 20 25 30 0 C is s F igure 2. Trans fer C haracteris tics V G S =4.5V ID=2.5A R DS (ON), On-R es is tance Normalized 1.8 1.4 1.0 0.6 0.2 C , C apacitance (pF ) C os s -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 4 S T S 2620 N-C hannel B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 8 6 4 2 0 0 3 6 9 V DS =5V 12 15 Is , S ource-drain current (A) 10 10 1 0 0.4 0.8 1.2 1.6 T J =25 C 2.0 2.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T S 2620 P-C hannel 20 -V G S =10V 15 -V G S =4.5V -V G S =6V 25 C -I D, Drain C urrent(A) -ID, Drain C urrent (A) 16 12 -55 C 9 T j=125 C 12 -V G S =4V -V G S =3V 8 4 6 3 0 0.0 -V G S =2V 0 0 0.5 1 1.5 2 2.5 3 0.8 1.6 2.4 3.2 4.0 4.8 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 500 400 300 200 100 0 C rs s 0 5 10 15 20 25 30 C is s F igure 2. Trans fer C haracteris tics V G S =-4.5V ID=-2.0A R DS (ON), On-R es is tance (Normalized) 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) C os s -50 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 6 S T S 2620 P-C hannel B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 9 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 6 4.5 3 1.5 0 0 3 6 9 V DS =-5V 12 15 -Is , S ource-drain current (A) 7.5 10 1 0 0.4 0.8 1.2 1.6 T J =25 C 2.0 2.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 7 S T S 2620 N-C hannel V G S , G ate to S ource V oltage (V ) 5 ID, Drain C urrent (A) 50 4 3 2 1 0 0 VDS =4.5V ID=2.5A 10 RD ON S( )L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area P-C hannel -V G S , G ate to S ource V oltage (V ) 5 -ID, Drain C urrent (A) 13 4 3 2 1 0 0 VDS =-4.5V ID=-2.0A 10 RD S ( ) ON L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =-4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 0.5 1 1.5 2 2.5 3 3.5 4 Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 8 S T S 2620 V DD ton V IN D VG S RL V OUT V OUT R GE N G 90% 10% toff tr 90% td(on) td(off) 90% 10% tf INVE R TE D 5 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.05 0.1 t2 0.01 0.00001 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) P-C hannel 10 Normalized Transient Thermal Resistance Normalized Thermal Transient Impedance Curve Square Wave Pulse Duration(sec) 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 95 S T S 2620 10 S T S 2620 TSOP6 Tape and Reel Data TSOP6 Carrier Tape TSOP6 Reel 11 |
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